A diode can only pass current or block it. A transistor can control it — a tiny
current at one terminal governing a much larger one at another — and that is the whole
of amplification, oscillation and switching. Section A tests this lesson harder than
almost any other: the doping of the three regions, the two current relations, which
junction is biased which way, and the three configurations. None of it is difficult once
you can picture what is physically happening inside the device.
Two junctions, back to back
A bipolar junction transistor (BJT) is a single crystal grown as three layers:
either N-P-N or P-N-P. That gives two PN junctions sharing a middle region. The three
terminals are the emitter, which emits the carriers, the
base in the middle, and the collector, which collects
them.
“Bipolar” means both kinds of carrier take part: electrons and holes.
A PNP transistor works exactly like an NPN with every supply polarity reversed, so
everything below is written for the NPN and you may flip the signs for a PNP.
An NPN and a PNP transistor, as layers and as symbols. The arrow is always on the emitter, and it always points in the direction of conventional current: out of the emitter for NPN, in to the emitter for PNP. NPN — Not Pointing iN.
The three regions are not built alike
Region
Doping
Size
Why
Emitter
Heaviest
Moderate
It has to inject a large supply of carriers into the base
Base
Lightest
Very thin
So that almost all the injected carriers get across before they recombine
Collector
Moderate
Physically largest
It dissipates the most heat, because it has the largest voltage across it
Memorise that order — heavy, light, moderate — because the paper asks it
directly, and it also offers “heavy, moderate, light” as a plausible-looking
distractor. And note the separation between doping and size: the collector is the
biggest lump of silicon but it is not the most heavily doped; the emitter is.
Transistor action, and why the base must be thin
Bias an NPN so that the base-emitter junction is forward biased and the
base-collector junction is reverse biased. Now follow one electron.
The forward-biased base-emitter junction has its depletion layer collapsed, so the
heavily doped emitter floods electrons into the base.
Once in the base those electrons are minority carriers, in P-type material full of
holes. They ought to recombine and leave as base current.
But the base is only a fraction of a micrometre thick and has very few holes in
it. Before an electron finds a hole, it has wandered into the reach of the
base-collector junction.
That junction is reverse biased, and its field points exactly the way to sweep an
electron across into the collector. Reverse bias blocks majority carriers,
but it accelerates minority carriers — which is what these electrons now
are.
The result: 98 to 99.5 per cent of what the emitter injects arrives at the collector,
and only a small remainder leaves through the base. Thicken the base or dope it more
heavily and more electrons recombine on the way, the base current rises, the collector
current falls and the gain is destroyed. The base must be thin and lightly
doped.
The current relations
Everything that leaves by the base and the collector must have entered by the
emitter. Kirchhoff's current law, applied to a three-terminal device:
Ie = Ib + Ic
all three in the same unit
Emitter current equals base current plus collector current.
So the emitter current is always the largest of the three. The two gain figures are
simply ratios taken from that equation:
α = Ic ÷ Ie β = hFE = Ic ÷ Ib
Alpha is collector current over emitter current; beta, also written h F E, is collector current over base current.
Alpha is always a little less than one — typically 0.95 to
0.995 — because the collector can never receive more than the emitter sent.
Beta, the current gain of the ordinary common-emitter stage, is
typically 20 to 500 and varies enormously between samples of the same part number and
with temperature. Design that depends on a precise value of beta is bad design.
Worked example
A transistor passes 20 µA of base current and 2 mA of collector current.
Convert first: 20 µA = 0.02 mA.
Ie = Ib + Ic = 0.02 + 2 = 2.02 mA
β = Ic ÷ Ib = 2 ÷ 0.02 = 100
α = Ic ÷ Ie = 2 ÷ 2.02 = 0.990
Notice how close alpha is to unity, and how much larger beta is. If a multiple-choice
answer for alpha is greater than 1, it is wrong on sight.
Biasing
A transistor on its own does nothing useful with a signal. Bias is the steady DC
you apply to set a no-signal operating point — the quiescent point, or
Q-point — so that the incoming AC signal has room to swing both up and down without
running out of transistor at either end. Bias it too low and the negative half of the
signal is clipped at cut-off; too high and the positive half is clipped at saturation.
The purpose of biasing is to set a steady operating point so the signal is amplified
without distortion. That is close to the examiner's own wording.
Region
Base-emitter junction
Base-collector junction
Behaviour
Active
Forward biased
Reverse biased
Linear amplification — the region every amplifier works in
Saturation
Forward biased
Forward biased
Fully ON. A few tenths of a volt collector to emitter
Cut-off
Reverse biased
Reverse biased
Fully OFF. Only leakage flows
Saturation and cut-off are useless for an amplifier and perfect for a switch. Which
of the three you are in is decided entirely by the bias.
Fixed bias versus potential-divider bias
Fixed bias is one resistor from the supply to the base. It sets the
base current, and then leaves beta to decide the collector current:
Ic = β × Ib. Since beta varies by a factor of three between samples and
climbs as the device warms, the operating point wanders. Cheap, and unstable.
Potential-divider bias uses two resistors to fix the base
voltage and adds a resistor in the emitter lead. The divider is made stiff
enough that the base sits at a fixed voltage whatever the transistor does; the emitter
then sits about 0.7 V below that; and the emitter current is simply that voltage divided
by the emitter resistor. Beta hardly enters into it. This is why potential-divider bias
is the standard arrangement in almost every amplifier you will meet.
Potential-divider bias. R1 and R2 hold the base at a fixed voltage; Re then sets the emitter current almost independently of beta, and provides the negative feedback that stops thermal runaway. Rc converts the collector current back into an output voltage.
Thermal runaway, and the resistor that stops it
Recall the negative temperature coefficient from the diode
lesson. A warm transistor passes more collector current. More collector current
means more power dissipated in the device, which makes it warmer, which makes it pass
more current. That loop is thermal runaway, and left alone it ends with
a destroyed transistor.
The emitter resistor Re breaks it. Rising emitter current raises the
voltage at the emitter. The base is held at a fixed voltage by the divider, so the
voltage across the base-emitter junction — which is what actually controls the
current — falls. Less forward bias, less current, and the loop is self-correcting. This
is negative feedback doing a DC job, and it is the single most important reason for that
resistor being there.
The three configurations
One terminal is common to both input and output, and its name gives the
configuration.
Property
Common emitter (CE)
Common base (CB)
Common collector (CC) / emitter follower
Voltage gain
High
High
Just under 1
Current gain
High (β)
Just under 1 (α)
High
Power gain
Highest of the three
Moderate
Moderate
Input impedance
Medium, 1–2 kΩ
Lowest, tens of ohms
Highest, tens of kΩ
Output impedance
High, tens of kΩ
Very high
Lowest, tens of ohms
Phase inversion
Yes, 180°
No
No
Typical use
General-purpose amplification, most stages in a rig
VHF/UHF RF stages; matching a very low-impedance source
Buffer, impedance matching, driving a low-impedance load
Why does common emitter invert? A rising base voltage increases collector current,
which increases the drop across Rc, which pulls the collector down. Note also
that “an amplifier always inverts” is not a safe rule — the other two
configurations do not. And the emitter follower, with a voltage gain of less than one,
amplifies no voltage at all; what it gives you is high input impedance with low output
impedance, which is precisely the definition of a buffer. That is the property the
oscillator lesson needs.
The transistor as a switch
Drive the base hard enough and the transistor saturates: collector to emitter
becomes a few tenths of a volt, effectively a closed switch. Remove the base drive and
it cuts off: an open switch. Held anywhere between the two it behaves as a
variable resistor, and that is how it amplifies.
The FET and the MOSFET
The field-effect transistor does the same job by a different mechanism. Instead of a
base current, a voltage on the gate produces an
electric field that widens or narrows a conducting channel between the
source and the drain. The gate is either a
reverse-biased junction (a JFET) or a metal plate insulated from the channel by a layer
of oxide (a MOSFET), so in both cases it draws essentially no current.
An N-channel JFET and an N-channel MOSFET. Gate, drain and source do the work of base, collector and emitter, but the gate controls by voltage and draws no current — which is where the very high input impedance comes from.
BJT
FET / MOSFET
Controlled by
Base current
Gate voltage
Input impedance
Low to medium
Very high — megohms for a JFET, effectively infinite for a MOSFET
Terminals
Emitter, base, collector
Source, gate, drain
Carriers
Both (bipolar)
One only (unipolar)
A JFET is a depletion-mode device: with zero volts on the gate the
channel is open and the FET is normally on, and reverse gate bias pinches the
channel off. That is the opposite of a BJT, which needs bias before it conducts at all.
Enhancement-mode MOSFETs are normally off and need gate voltage to turn on.
FETs are preferred in receiver RF front ends and mixers for two
reasons the exam likes. First, the very high input impedance barely loads the tuned
circuit feeding it, so the selectivity of that circuit is preserved. Second, a FET's
transfer characteristic is close to a square law, which produces far fewer unwanted
mixing products than a BJT does — so a FET mixer generates less
cross-modulation and copes better with a strong signal on a nearby
frequency. The dual-gate MOSFET, with the signal on one gate and AGC on the other, was
the standard receiver front end for a generation and is still common.
Practice
Check yourself
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Thirty-six lessons is the better part of eight hours of footage, and it is
only worth recording if people would actually watch it rather than read.
One tap tells me. Nothing else is asked of you.